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Brand Name : onsemi
Model Number : FDC658AP
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
Drain to Source Voltage (Vdss) : 30 V
Current - Continuous Drain (Id) @ 25°C : 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 50mOhm @ 4A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Vgs (Max) : ±25V
Single P-Channel (–1.5 V) Specified PowerTrench® MOSFETSingle P-Channel (–1.5 V) Specified PowerTrench® FDC658AP MOSFET Power Electronics Single P-Channel POWERTRENCH Logic Level -30 V -4 A 50 m
P-Channel 1.8V Specified PowerTrench MOSFET–20 V, –0.83 A, 0.5 Ω
 –20 V, –0.83 A, 0.5 ΩSingle P-Channel (–1.5 V) Specified PowerTrench® MOSFET–20 V, –0.83 A, 0.5 
|  			 FET Type  			 |  			 			 |  		|
|  			 Technology  			 |  			 			 MOSFET (Metal Oxide)  			 |  			 			 |  		
|  			 Drain to Source Voltage (Vdss)  			 |  			 			 |  		|
|  			 Current - Continuous Drain (Id) @ 25°C  			 |  			 			 |  		|
|  			 Drive Voltage (Max Rds On, Min Rds On)  			 |  			 			 4.5V, 10V  			 |  			 			 |  		
|  			 Rds On (Max) @ Id, Vgs  			 |  			 			 50mOhm @ 4A, 10V  			 |  			 			 |  		
|  			 Vgs(th) (Max) @ Id  			 |  			 			 3V @ 250µA  			 |  			 			 |  		
|  			 Gate Charge (Qg) (Max) @ Vgs  			 |  			 			 8.1 nC @ 5 V  			 |  			 			 |  		
|  			 Vgs (Max)  			 |  			 			 ±25V  			 |  			 			 |  		
|  			 Input Capacitance (Ciss) (Max) @ Vds  			 |  			 			 470 pF @ 15 V  			 |  			 			 |  		
|  			 FET Feature  			 |  			 			 -  			 |  			 			 |  		
|  			 Power Dissipation (Max)  			 |  			 			 1.6W (Ta)  			 |  			 			 |  		
|  			 Operating Temperature  			 |  			 			 -55°C ~ 150°C (TJ)  			 |  			 			 |  		
|  			 Mounting Type  			 |  			 			 |  		|
|  			 Supplier Device Package  			 |  			 			 SuperSOT™-6  			 |  			 			 |  		
|  			 Package / Case  			 |  			
General Description
 This P−Channel Logic Level MOSFET is produced using onsemi
 advanced POWERTRENCH process. It has been optimized for battery
 power management applications.
 Features
 • Max RDS(on) = 50 m @ VGS = −10 V, ID = −4 A
 • Max RDS(on) = 75 m @ VGS = −4.5 V, ID = −3.4 A
 • Low Gate Charge
 • High Performance Trench Technology for Extremely Low RDS(on)
 • Pb−Free, Halide Free and RoHS Compliant
 Applications
 • Battery Management
 • Load Switch
 • Battery Protection
 • DC−DC Conversion

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                        FDC658AP MOSFET Power Electronics Single P-Channel POWERTRENCH Logic Level -30 V -4 A 50 m Images |