NTR4003NT1G MOSFET Power Electronics
N-Channel MOSFET Transistor TO-236-3 Solution Switching Amplification Applications
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
The NTR4003NT1G is a P-Channel enhancement mode power MOSFET with a TO-236-3 package. It is designed to minimize the on-state resistance and provide superior switching performance.
The device has an operating drain-source voltage of -20V and a continuous drain current of -3A. It is suitable for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. The device is also RoHS compliant and halogen free. The NTR4003NT1G is guaranteed to provide reliable operation over a wide temperature range of -55°C to +150°C.
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NTR4003NT1G MOSFET Power Electronics N-Channel MOSFET Transistor TO-236-3 Solution Switching Amplification Applications Images
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